An Integrated Isolator Circuit in a Time Division Duplex Transceiver

ABSTRACT

An integrated isolator circuit for isolating receiver and transmitter in a Time-Division Duplex transceiver is disclosed. The integrated isolator circuit comprises a first node, a second node and a third node. The integrated isolator circuit further comprises a first capacitor connected in series with a first switch and connected between the first and second nodes. The integrated isolator circuit further comprises a first inductor connected between the first and second nodes and a second capacitor connected between the second node and the third node. The first switch has an on state and an off state, and the integrated isolator circuit is configured to have a different impedance at a certain operating frequency by controlling the state of the first switch.

TECHNICAL FIELD

Embodiments herein relate to an integrated isolator circuit. In particular, they relate to an integrated isolator circuit for isolating receiver and transmitter in a Time-Division Duplex transceiver and a wireless communication device comprising the Time-Division Duplex transceiver.

BACKGROUND

Transmitter (Tx) and receiver (Rx) isolators (Tx/Rx) or transceiver (TRX) switches are commonly used in transceivers in wireless communication devices to protect receiver circuitry from strong Tx signals generated by power amplifiers in transmitter circuitry. If the Tx signals reach input port of the Rx circuitry without attenuation, the high amplitude of the Tx signals may destroy the sensitive receiver inputs.

FIG. 1 shows a TRX isolator in Tx mode. The Tx switch T1 is ON so it presents a low impedance and the Tx signal gets through to the antenna. However, the Rx switch T2 is OFF and presents a large impedance compared to the receiver input impedance. As a result, most of the Tx signal voltage swing drops across the open Rx switch T2 instead of the Rx input thus protecting the Rx input from damage.

FIG. 2 shows the Tx/Rx isolator in Rx mode. The Tx switch T1 is OFF in order to stop signals received from antenna from going into the Tx output and increasing the Rx insertion loss. The Rx switch T2 is ON presenting a low impedance to the signal received from the antenna.

In order to work properly as part of a transceiver, an isolator must have low Tx insertion loss, low Rx insertion loss and high linearity.

A high Tx insertion loss results in low efficiency of the transmitter while a high Rx insertion loss results in loss of sensitivity for the receiver.

Error Vector Magnitude (EVM) is usually used to measure the quality of a radio receiver or transmitter in digital communications. Noise, distortion, spurious signals, and phase noise all degrade EVM. Low linearity of the isolator may result in poor Adjacent Channel Leakage Power Ratio (ACLR) at the antenna, which compromises the EVM and thus the performance of the transceiver. Switches implemented with Complementary Metal Oxide Semiconductor (CMOS) in current technology are quite non-linear when operating with large signal voltage swings.

Typically, external components are used for implementing TRX isolators or switches functionality. However, this approach results in high costs and increased board area.

Integrated Tx/Rx isolation circuits have been reported. However, most of these solutions rely on CMOS switches to provide isolation and take high Tx signal swing. Due to high signal voltage swing at the Tx output, multiple switches usually must be stacked in order to avoid breakdown. However, a large number of stacked switches may result in high insertion loss during Rx operation. Also, in this stacked switches arrangement, careful control of biasing of each device is required which may be quite complicated if the switches are operating at the margin of their voltage handling capability. Furthermore, due to the high voltage swing at the antenna node, it is typically difficult to turn off the devices completely. This may result in increased non-linearity leading to reduced ACLR.

SUMMARY

Therefor it is an object of embodiments herein to provide an integrated isolator circuit with improved performance for communication transceivers.

According to one aspect of embodiments herein, the object is achieved by an integrated isolator circuit for isolating receiver and transmitter in a Time-Division Duplex transceiver. The integrated isolator circuit comprises a first node, a second node and a third node. The integrated isolator circuit further comprises a first capacitor connected in series with a first switch and connected between the first and second nodes. The integrated isolator circuit further comprises a first inductor connected between the first and second nodes, and a second capacitor connected between the second node and the third node. The first switch has an on state and an off state, and the integrated isolator circuit is configured to have a different impedance at a certain operating frequency by controlling the state of the first switch.

The integrated isolator circuit according to some of the embodiments herein operates as a third order filter with associated peak and notch resonance frequencies. The peak and notch frequencies of the third order filter are controlled by the first switch such that the impedance at a certain operating frequency is switched to a high or low value as desired. Thus when using the integrated isolator circuit according to embodiments herein in a transceiver, low Tx insertion loss and low Rx insertion loss may be achieved by presenting a high impedance during Tx mode and low impedance during Rx mode in the integrated isolator circuit. The first capacitor used in series with the first switch which may be implemented by e.g. CMOS or Micro-Electro-Mechanical Systems (MEMS) technology, handles the voltage swing together instead of the first switch alone. In this way, the voltage swing on the switch device is reduced and thus high linearity is achieved.

Further, in some embodiments the peak and notch frequencies of the integrated isolator circuit are tunable by tuning values of the components in the circuit, e.g. the first inductor, the first and second capacitors. Thus a highly linear, simple structure, tunable TRX switch or isolator may be achieved and may be implemented and integrated on-chip with existing silicon technologies. The integrated isolator circuit may offer even better performance when implemented with upcoming MEMS technology that offers much better switches.

Thus, embodiments herein provide an integrated isolator circuit with improved performance on e.g. linearity and/or insertion loss. The integrated isolator circuit may also provide reduced cost and/or size due to its relatively simple structure.

BRIEF DESCRIPTION OF THE DRAWINGS

Examples of embodiments herein are described in more detail with reference to attached drawings in which:

FIG. 1 is a block view of a prior art TRX isolator in Tx mode;

FIG. 2 is a block view of a prior art TRX isolator in Rx mode;

FIG. 3 is a schematic view illustrating a third order filter;

FIG. 4 is a schematic view illustrating an integrated isolator circuit according to one embodiment herein, where (a) is in Rx mode and (b) is in Tx mode;

FIG. 5 is a diagram illustrating impedance of an integrated isolator circuit according to embodiments herein in Tx mode;

FIG. 6 is a diagram illustrating Tx signal voltages at an antenna and a Rx port;

FIG. 7 is a diagram illustrating impedance of an integrated isolator circuit according to embodiments herein in Rx mode;

FIG. 8 is a schematic view illustrating an integrated isolator circuit according to one embodiment herein, where (a) is in Rx mode and (b) is in Tx mode;

FIG. 9 is a schematic view illustrating an integrated isolator circuit according to one embodiment herein;

FIG. 10 is a diagram showing impact of capacitor tuning on impedance of the integrated isolator circuit shown in FIG. 9;

FIG. 11 is a diagram showing Tx insertion loss when the integrated isolator circuit shown in FIG. 9 is used in a transceiver;

FIG. 12 is a block diagram illustrating a wireless communication device in which embodiments herein may be implemented.

DETAILED DESCRIPTION

As part of developing embodiments herein, a third order filter will first be discussed. FIG. 3 shows a third order filter 300 (a) along with its magnitude (b) and phase (c) characteristics. Two resonance frequencies are associated with the filter 300, a peak resonance frequency ω_(p) and a notch resonance frequency ω_(n) as shown in FIG. 3 (b).

The peak resonance frequency ω_(p) corresponding to a peak in impedance, is determined primarily by values of the components C₁ and L₁ in the LC parallel tank and the series capacitor C₂ may be ignored:

$\omega_{p} = \frac{1}{\sqrt{L_{1}C_{1}}}$

The notch resonance frequency ω_(n) corresponding to a notch in impedance, is determined by all three components of the filter 300. It is the frequency at which the reactive part of the parallel tank impedance is equal in magnitude and opposite in sign to the reactance of the series capacitor C₂.

$\omega_{n} = \sqrt{\frac{1}{L_{1}} \cdot \frac{1}{C_{1} + C_{2}}}$

With these discussions in mind, an integrated isolator circuit 400 according to embodiments herein is shown in FIG. 4. The integrated isolator circuit 400 may be used in a transceiver e.g. a Time-Division Duplex (TDD) transceiver, for isolating a receiver Rx 410 and a transmitter Tx 420. The TDD transceiver uses a single frequency, alternating between uploading and downloading data over time. Frequencies used for TDD transceivers may range from 1850 MHz to 27 GHz, with several different bands being used.

As shown in FIG. 4, the integrated isolator circuit 400 comprises a first node 401, a second node 402 and a third node 403.

The integrated isolator circuit 400 comprises a first capacitor C1 connected in series with a first switch T1 and connected between the first and second nodes 401, 402.

The integrated isolator circuit 400 further comprises a first inductor L1 connected between the first and second nodes 401, 402 and a second capacitor C2 connected between the second node 402 and the third node 403.

The first switch T1 has an on state and an off state, and the integrated isolator circuit 400 is configured to have a different impedance at a certain operating frequency by controlling the state of the first switch T1.

The integrated isolator circuit 400 works as a third order filter and operates in two modes, an Rx mode, where T1 is off as shown in FIG. 4 (a) and a Tx mode, where T1 is on as shown in FIG. 4 (b). The first switch T1 in series with C₁ has a capacitance C_(sw), with value C_(on) or C_(off), such that the resonance frequencies described above are determined by the combination of C₁ and C_(sw), i.e. an equivalent tank capacitance of the C₁ and C_(sw).

The equivalent tank capacitance is:

$C_{eq} = \frac{C_{1}C_{sw}}{C_{1} + C_{sw}}$

The different operations or modes will be discussed in the following.

Transmit Operation (Tx Mode):

Assuming ω_(p) is the operating frequency, during the Tx operation the integrated isolator circuit 400 should present a large impedance at this frequency. Therefore, the tank is tuned such that:

$\omega_{p} = \frac{1}{\sqrt{L_{1}C_{eq}}}$

The first switch T1 in series with C₁ is ON during Tx mode and it is designed such that, in Tx mode, C_(on)>>C₁, and C_(eq)≅C₁. Therefore, the effect of C_(on) is negligible and C₁ determines the peak resonance frequency in the Tx mode. The capacitance value of the first capacitor C₁ is thus:

$C_{1} = \frac{1}{\omega_{p}^{2} \cdot L_{1}}$

The integrated isolator circuit 400 presents a large impedance at the operating frequency as shown in FIG. 5. The peak impedance at the operating frequency is ˜400 Ohm, as shown by mark M1. The notch is pushed down to ˜12 Ghz and the resistance in the notch is around 4 Ohm, as shown by mark M2. This implementation assumed a quality (Q) value of 20 for the first inductor L₁.

Due to this large impedance, a small current will flow through the transformer primary part 430 due to Tx signal and thus a small amount of Tx signal will reach the Rx 410 port. This is shown in FIG. 6 where a solid line shows the Tx signal voltage at the antenna and a dashed line shows the Tx signal voltage that reaches the Rx port.

Since the first switch T1 in the tank is ON in the Tx mode, it presents a small impedance and almost all the voltage Vx drops across C₁. Thus a very small voltage drops across the first switch T1 which ensures good linearity as well as protection against damage to the first switch T1 from the large Tx voltage swing.

Receive Operation (Rx Mode):

In the Rx mode, the integrated isolator circuit 400 shows minimum impedance at the operating frequency. In this mode, the first switch T1 in series with C₁ is OFF as shown in FIG. 4 (a). The first switch T1 is dimensioned such that C_(eq) becomes small, hence pushing the peak resonance to a high frequency. C₂ is then designed such that the notch appears at the operating frequency instead. This is done by replacing C₁ with C_(eq) in the expression for ω_(n).

$\omega_{n} = \sqrt{\frac{1}{L_{1}} \cdot \frac{1}{C_{eq} + C_{2}}}$

The capacitance value of C₂ may then be calculated as:

$C_{2} = {\frac{1}{\omega_{n}^{2} \cdot L_{1}} - C_{eq}}$

As shown in FIG. 7, due to the low value of C_(eq) when the first switch T1 is OFF, the tank impedance peak is moved far above the operating frequency. With the proper choice of C₂, the impedance notch moves to the operating frequency, e.g. 27 GHz in this case.

Therefore, according to embodiments herein, when the state of the first switch T1 is on during transmitting mode, the integrated isolator circuit 400 is configured to have high impedance at the operating frequency, and when the state of the first switch T2 is off during receiving mode, the integrated isolator circuit 400 is configured to have low impedance at the operating frequency.

At high frequencies, the calculated size of the second capacitor C₂ may become too small for easy implementation. A switch connected in series with C₂ may be used to relax this size requirement. FIG. 8 shows an integrated isolator circuit 800 according to one embodiment herein, where a second switch T2 is connected in series with the second capacitor C₂. The integrated isolator circuit 800 operates in the same way as the integrated isolator circuit 400, i.e. operates in two modes, an Rx mode, where T1 is off as shown in FIG. 8 (a) and a Tx mode, where T1 is on as shown in FIG. 8 (b).

During the Tx operation C₂ does not contribute significantly to the peak impedance of the integrated isolator circuit 800 and therefore the second switch T2 may be kept ON. In Rx mode, the second switch T2 is turned OFF and both C₂ and the small off capacitance of the second switch C_(off_2) are combined to provide the required capacitance value.

In order to further reduce voltage swing across the active devices, i.e. the first switch T1, it is feasible to stack multiple switches. As long as the C_(off) for the stacked switches is significantly larger than C₁, the switches will not experience excessive voltage swing. Stacking multiple switches may be necessary, for example, if frequency tuning is required by using one or more parallel switched capacitor branches, where some of the switched capacitor branches may need to be turned off.

FIG. 9 shows an integrated isolator circuit 900 according to one embodiment herein, where the integrated isolator circuit 900 comprises one or more switched capacitor branches 910, 912 . . . . As shown in FIG. 9, the one or more switched capacitor branches 910, 912 . . . may be connected between the first and second nodes (901,902) of the integrated isolator circuit 900, as shown by a dotted line 904, or connected between the first and the third nodes (901, 903) of the integrated isolator circuit 900, as shown by a solid line 905. Each switched capacitor branch may comprise a capacitor ΔC connected in series with a switch S1, e.g. shown in a dotted line box. The switch S1 in one or more capacitor branches may be implemented by a single switch or multiple stacked switches.

Following the design consideration described above, i.e. the C_(off) for the stacked switches is significantly larger than ΔC, so the additional capacitors ΔC will be small and will retain a large part of the voltage swing thus reducing the impact on switch linearity.

FIG. 10 shows impact of tuning on impedance of the integrated isolator circuit 900 in Tx and Rx modes by switching the one or more switched capacitor branches. It can be seen that the peak impedance may be tuned for different operating frequencies for both Tx and Rx modes.

FIG. 11 shows impact of tuning on the Tx insertion loss by switching the one or more switched capacitor branches. It can be seen that the Tx insertion loss increases when more switched capacitor branches are turned on.

In order to show the performance of the integrated isolator circuit according to embodiments herein, some simulations on the integrated isolator circuit 900 have been done. In these simulations, inductor L1 has a Q value of 20, the operating frequency is set to 27 GHz.

The following performance has been observed:

Total Tx Power: 23 dBm

Tx-Rx isolation: >26 dB

Tx insertion loss: 0.89 dB

Rx insertion loss: ˜0.5 dB, excluding the transformer loss i.e. with an ideal transformer

The 3^(rd) order intermodulation: IM3<58 dBc, at +23 dBm Tx power level, IM3 will further decrease when turning on more switched capacitor branches.

As can be seen from the above performance, embodiments herein provide an integrated isolator circuit with improved linearity and insertion loss.

The integrated isolator circuit 400, 800, 900 according to the embodiments herein may be employed in various wireless communication devices. FIG. 12 shows a block diagram for a wireless communication device 1200, which may be a user equipment or a mobile device, a base station or multi-antenna systems in a radio base station. The wireless communication device 1200 may comprise e.g. a radio frequency transceiver 1210, a control circuit 1220 and other units, where a processing unit 1130 is shown, which may interactive with the control circuit 1220 for different tuning and operating of the integrated isolator circuit 400, 800, 900.

Those skilled in the art will understand that the switches in the integrated isolator circuit 400, 800, 900 may be implemented by e.g. Field-Effect Transistors (FET), Metal-Oxide-Semiconductor FET (MOSFET), Junction FET (JFET), Bipolar Junction Transistors (BJT), CMOS or Micro-Electro-Mechanical Systems (MEMS) technology etc.

When using the word “comprise” or “comprising” it shall be interpreted as non-limiting, i.e. meaning “consist at least of”.

The embodiments herein are not limited to the above described preferred embodiments. Various alternatives, modifications and equivalents may be used. Therefore, the above embodiments should not be taken as limiting the scope of the invention, which is defined by the appended claims. 

1-9. (canceled)
 10. An integrated isolator circuit configured for isolating a receiver and a transmitter in a Time-Division Duplex transceiver, comprising: a first node, a second node and a third node; a first capacitor connected in series with a first switch and connected between the first and second nodes; a first inductor connected between the first and second nodes; and a second capacitor connected between the second node and the third node; wherein the first switch has an on state and an off state, and the integrated isolator circuit is configured to have a different impedance at a certain operating frequency by controlling the state of the first switch.
 11. The integrated isolator circuit according to claim 10, wherein when the state of the first switch is on during transmitting mode, the integrated isolator circuit is configured to have high impedance at the operating frequency, and when the state of the first switch is off during receiving mode, the integrated isolator circuit is configured to have low impedance at the operating frequency.
 12. The integrated isolator circuit according to claim 10, further comprising a second switch connected in series with the second capacitor.
 13. The integrated isolator circuit according to claim 10, further comprising one or more switched capacitor branches connected between the first and second nodes.
 14. The integrated isolator circuit according to claim 10, further comprising one or more switched capacitor branches connected between the first and the third nodes.
 15. The integrated isolator circuit according to claim 13, wherein each switched capacitor branch comprises a capacitor connected in series with a switch.
 16. The integrated isolator circuit according to claim 15, wherein the switch in one or more capacitor branches is implemented by multiple stacked switches.
 17. A transceiver comprising the integrated isolator circuit according to claim
 10. 18. A wireless communication device comprising the transceiver according to claim
 17. 